wuxi nce power semiconductor co., ltd page http://www.ncepower.com v1.0 1 NCE70R260d,NCE70R260,NCE70R260f n-channel super junction power mosfet v ds @t jmax 750 v r ds(on) typ 260 m ? i d 15 a general description the series of devices use advanced super junction technology and design to provide excellent r ds(on) with low gate charge. this super junction mosfet fits the industry?s ac-dc smps requirements for pfc, ac/dc power conversion, and industrial power applications. features new technology for high voltage device low on-resistance and low conduction losses small package ultra low gate charge cause lower driving requirements 100% avalanche tested rohs compliant application power factor correction pfc switched mode power supplies(smps) uninterruptible power supply ups package marking and ordering information device device package marking NCE70R260d to-263 NCE70R260d NCE70R260 to-220 NCE70R260 NCE70R260f to-220f NCE70R260f table 1. absolute maximum ratings (t c =25 ) parameter symbol NCE70R260d NCE70R260 NCE70R260f unit drain-source voltage ( v gs= 0v v ds 700 v gate-source voltage ( v ds= 0v) v gs 30 v continuous drain current at tc=25c i d (dc) 15 15* a continuous drain current at tc=100c i d (dc) 10 10* a pulsed drain current (note 1) i dm (pluse) 45 45* a maximum power dissipation(tc=25 ) derate above 25 c p d 145 1.16 33.5 0.268 w w/ c single pulse avalanche energy (note 2) e as 370 mj avalanche current (note 1) i ar 7.5 a repetitive avalanche energy t ar limited by t jmax (note 1) e ar 0.8 mj schematic dia g ram to-263 to-220 to-220f
wuxi nce power semiconductor co., ltd page http://www.ncepower.com v1.0 2 NCE70R260d,NCE70R260,NCE70R260f parameter symbol NCE70R260d NCE70R260 NCE70R260f unit drain source voltage slope, v ds 480 v, dv/dt 50 v/ns reverse diode dv/dt v ds 480 v,i sd NCE70R260d NCE70R260 NCE70R260f unit thermal resistance junction-to-case maximum r thjc 0.86 3.73 c /w thermal resistance junction-to-ambient maximum r thja 62 80 c /w table 3. electrical characteristics (ta=25 unless otherwise noted) parameter symbol condition min typ max unit on/off states drain-source breakdown voltage bv dss v gs =0v i d =250 a 700 v zero gate voltage drain current(tc=25 ) i dss v ds =700v,v gs =0v 1 a zero gate voltage drain current(tc=125 ) i dss v ds =700v,v gs =0v 100 a gate-body leakage current i gss v gs =30v,v ds =0v 100 na gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 2.5 3 3.5 v drain-source on-state resistance r ds(on) v gs =10v, i d =8a 260 290 m ? dynamic characteristics forward transconductance g fs v ds = 20v, i d = 8a 11 s input capacitance c lss 1360 pf output capacitance c oss 115 pf reverse transfer capacitance c rss v ds =50v,v gs =0v, f=1.0mhz 4.8 pf total gate charge q g 29 45 nc gate-source charge q gs 6.5 nc gate-drain charge q gd v ds =480v,i d =15a, v gs =10v 12 nc intrinsic gate resistance r g f = 1 mhz open drain 10 ? switching times turn-on delay time t d(on) 10 ns turn-on rise time t r 5 ns turn-off delay time t d(off) 55 75 ns turn-off fall time t f v dd =380v,i d =8a, r g =5.5 ? ,v gs =10v 4.5 10 ns source- drain diode characteristics source-drain current(body diode) i sd 15 a pulsed source-drain current(body diode) i sdm t c =25c 45 a forward on voltage v sd tj=25c,i sd =8a,v gs =0v 0.9 1.2 v reverse recovery time t rr 270 ns reverse recovery charge q rr 3.3 uc peak reverse recovery current i rrm tj=25c,i f =8a,di/dt=100a/ s 24 a notes 1.repetitive rating: pulse width limited by maximum junction temperature 2. tj=25 ,vdd=50v,vg=10v, r g =25 ?
wuxi nce power semiconductor co., ltd page http://www.ncepower.com v1.0 3 NCE70R260d,NCE70R260,NCE70R260f typical electrical and therma l characteristics (curves) figure1. safe operating area figure2. safe operating area for to-220f figure3. source-drain diode forward voltage figure4. output characteristics figure5. transfer characteristics figure6. static drain-source on resistance
wuxi nce power semiconductor co., ltd page http://www.ncepower.com v1.0 4 NCE70R260d,NCE70R260,NCE70R260f figure7. r ds(on) vs junction temperature figure8. bv dss vs junction temperature figure9. maximum i d vs junction temperature figure10. gate charge waveforms figure11. capacitance figure12. transient thermal impedance
wuxi nce power semiconductor co., ltd page http://www.ncepower.com v1.0 5 NCE70R260d,NCE70R260,NCE70R260f figure13. transient thermal impedance for to-220f
wuxi nce power semiconductor co., ltd page http://www.ncepower.com v1.0 6 NCE70R260d,NCE70R260,NCE70R260f test circuit 1 gate charge test circuit & waveform 2 switch time test circuit 3 unclamped inductive switchin g test circuit & waveforms
wuxi nce power semiconductor co., ltd page http://www.ncepower.com v1.0 7 NCE70R260d,NCE70R260,NCE70R260f to-263-2l package information dimensions in millimeters dimensions in inches symbol min. max. min. max. a 4.470 4.670 0.176 0.184 a1 0.000 0.150 0.000 0.006 b 1.170 1.370 0.046 0.054 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 d 10.010 10.310 0.394 0.406 e 8.500 8.900 0.335 0.350 e 2.540 typ. 0.100 typ. e1 4.980 5.180 0.196 0.204 l 15.050 15.450 0.593 0.608 l1 5.080 5.480 0.200 0.216 l2 2.340 2.740 0.092 0.108 l3 1.300 1.700 0.051 0.067 v 5.600 ref 0.220 ref
wuxi nce power semiconductor co., ltd page http://www.ncepower.com v1.0 8 NCE70R260d,NCE70R260,NCE70R260f to-220-3l-c package information dimensions in millimeters dimensions in inches symbol min. max. min. max. a 4.400 4.600 0.173 0.181 a1 2.250 2.550 0.089 0.100 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.330 0.650 0.013 0.026 c1 1.200 1.400 0.047 0.055 d 9.910 10.250 0.390 0.404 e 8.9500 9.750 0.352 0.384 e1 12.650 12.950 0.498 0.510 e 2.540 typ. 0.100 typ. e1 4.980 5.180 0.196 0.204 f 2.650 2.950 0.104 0.116 h 7.900 8.100 0.311 0.319 h 0.000 0.300 0.000 0.012 l 12.900 13.400 0.508 0.528 l1 2.850 3.250 0.112 0.128 v 7.500 ref. 0.295 ref. 3.400 3.800 0.134 0.150
wuxi nce power semiconductor co., ltd page http://www.ncepower.com v1.0 9 NCE70R260d,NCE70R260,NCE70R260f to-220f package information
wuxi nce power semiconductor co., ltd page http://www.ncepower.com v1.0 10 NCE70R260d,NCE70R260,NCE70R260f attention: any and all nce products described or contained herein do not ha ve specifications that can h andle applications that require extremely high levels of reliability, such as life-support syst ems, aircraft's control systems, or other applications whose fai lure can be reasonably expected to result in serious ph ysical and/or material damage. consult with your nce representative nearest you before us ing any nce products described or c ontained herein in such applications. nce assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum rati ngs, operating condition ranges, or other parameters) listed in products specifications of any and all nce products described or contained herein. specifications of any and all nce pro ducts described or contained herein stipulat e the performance, characteristics, and functions of the described products in t he independent state, and are not guarantees of the perform ance, characteristics, and functions of the described products as mount ed in the customer?s products or equipmen t. to verify symptoms and states that cannot be evaluated in an indepe ndent device, the customer s hould always evaluate and test devices mounted in the customer?s products or equipment. nce power semiconductor co.,ltd. st rives to supply high-quality high-reli ability products. ho wever, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger hum an lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circui ts and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all nce products(including tec hnical data, services) described or contained herein are controlled under any of applicable local export control laws and regulat ions, such products must not be exported without obtaining the export license from the authorities concer ned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by an y means, electronic or mechanical, including photocopying and recording, or any information storage or retrieva l system, or otherwise, without the prior written permission of nce power semiconductor co.,ltd. information (including circuit diagrams and circuit parameter s) herein is for example only ; it is not guaranteed for volume production. nce believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual proper ty rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the nce product that you intend to use. this catalog provides information as of mar. 2010. specifications and information herein are subject to change without notice .
|
